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DG758BX45
DG758BX45
Gate Turn-off Thyristor
Replaces March 1998 version, DS4095-5.3 DS4095-6.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC). s Uninterruptable Power Supplies s High Voltage Converters. s Choppers. s Welding. s Induction Heating. s DC/DC Converters.
KEY PARAMETERS 3000A ITCM VDRM 4500V 870A IT(AV) dVD/dt 1000V/s 300A/s diT/dt
FEATURES
s Double Side Cooling. s High Reliability In Service. s High Voltage Capability. s Fault Protection Without Fuses. s High Surge Current Capability. s Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements.
Outline type code: X. See Package Details for further information.
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VRRM VDRM V V 4500 16 Conditions
DG758BX45
Tvj = 125oC, IDM = 100mA, IRRM = 50mA
CURRENT RATINGS
Symbol ITCM IT(AV) IT(RMS) Parameter Conditions Max. 3000 870 1365 Units A A A
Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/s, Cs = 6F Mean on-state current RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. THS = 80oC. Double side cooled. Half sine 50Hz.
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DG758BX45
SURGE RATINGS
Symbol ITSM I2t diT/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC VD = 3000V, IT = 3000A, Tj = 125oC, IFG > 40A, Rise time > 1.0s To 66% VDRM; RGK 1.5, Tj = 125oC dVD/dt Rate of rise of off-state voltage To 66% VDRM; VRG = -2V, Tj = 125oC Peak stray inductance in snubber circuit 1000 200 V/s nH Max. 16.0 1.28 x 106 300 100 Units kA A2s A/s V/s
LS
GATE RATINGS
Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time Conditions This value maybe exceeded during turn-off Min. 30 50 100 Max. 16 100 20 24 60 Units V A W kW A/s s s
THERMAL RATINGS AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range Clamping force Clamping force 35.0kN With mounting compound per contact Min. -40 -40 33.0 Max. 0.0146 0.0233 0.0392 0.0036 125 125 37.0 Units
o
C/W C/W C/W C/W
o
o
o
o
C C
o
kN
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DG758BX45
CHARACTERISTICS
Tj = 125oC unless stated otherwise Symbol VTM IDM IRRM VGT IGT IRGM EON td tr EOFF tgs tgf tgq QGQ QGQT IGQM On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current IT = 3000A, VDM = 3000V Snubber Cap Cs = 6.0F, diGQ/dt = 40A/s Parameter Conditions At 3000A peak, IG(ON) = 8A d.c. VDRM = 4500V, VRG = 0V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 2250V IT = 3000A, dIT/dt = 300A/s IFG = 40A, rise time < 1.0s Min. Max. 4.0 100 50 1.2 3.5 50 3000 1.5 3.0 6300 20.6 2.2 22.8 10000 20000 830 Units V mA mA V A mA mJ s s mJ s s s C C A
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DG758BX45
CURVES
2.0 8.0
Gate trigger voltage VGT - (V)
Gate trigger current IGT - (A)
1.5
6.0
1.0
4.0 VGT
0.5
IGT
2.0
0 -50
-25
75 0 25 50 100 Junction temperature Tj - (C)
0 125
Fig.1 Maximum gate trigger voltage/current vs junction temperature
5000
Measured under pulse conditions IG(ON) = 8A
Instantaneous on-state current - (A)
4000
Tj = 25C 3000
Tj = 125C 2000
1000
0 1.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Instantaneous on-state voltage - (V) FIG 2 MAXIMUM LIMIT ON characteristics Fig.2 On-state STATE CHARACTERISTICS 1.5
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DG758BX45
3000
Maximum permissible turn-off current ITCM - (A)
2500 2000 1500 1000 500 0 0 1.0 2.0 3.0 4.0 5.0 6.0 Snubber capacitance Cs - (F) Conditions: Tj = 125C, VDM = 2000V dIGQ/dt = 40A/s
Fig.3 Maximum dependence of ITCM on CS
0.020
Thermal impedance - C/W
0.015
dc
0.010
0.005
0 0.001
0.01
0.1 Time - s
1.0
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Peak half sine wave on-state current - (kA)
40
30
20
10
0 0.0001
0.001
0.01 0.1 Pulse duration - (ms)
1.0
Fig.5 Surge (non-repetitive) on-state current vs time 5/19
DG758BX45
4000
Mean on-state power dissipation - (W)
3500 3000
Conditions; IG(ON) = 8A 180 120
dc
2500 60 2000 1500 1000 500 0 0 30
200
400 600 800 1000 1200 1400 Mean on-state current - (A)
65 70
80 90 100 110 120 Maximum permissible case temperature - (C)
130
Fig.6 Steady state rectangluar wave conduction loss - double side cooled
Mean on-state power dissipation- (W)
3000 2500 2000 1500 1000 500 0 0 100 200 300 400 500 600 Mean on-state current - (A) 700 Conditions; IG(ON) = 8A 60 30 120 90
180
800 900 80 100 120 Maximum permissible case temperature - (C)
140
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
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DG758BX45
2250 Conditions: T = 25C 2000 j IFGM = 40A Cs = 6F 1750 Rs = 4.4 Ohms dI/dt = 300A/s 1500 1250 1000 750 500 250 0 0 500 1000 1500 2000 On-state current - (A)
Fig.8 Turn-on energy vs on-state current
VD = 2250V
Turn-on energy loss EON - (mJ)
VD = 1500V
VD = 750V
2500
3000
2500 2250
Turn-on energy loss EON - (mJ)
2000 1750 1500 1250 1000
VD = 2250V
VD = 1500V
VD = 750V
750 Conditions: IT = 3000A, Tj = 25C Cs = 6F, Rs = 4.4 Ohms, dIT/dt = 300A/s 500 0 10 20 30 40 50 60 70 Peak forward gate current IFGM- (A)
80
Fig.9 Turn-on energy vs peak forward gate current
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DG758BX45
3000
Turn-on energy loss EON - (mJ)
Conditions: Tj = 125C, IFGM = 40A 2500 Cs = 6F, Rs = 4.4 dIT/dt = 300A/s 2000 dIFG/dt = 40A/s 1500 1000 500 0 0 500 1000 1500 2000 On-state current - (A)
Fig.10 Turn-on energy vs on-state current
VD = 2250V
VD = 1500V
VD = 750V
2500
3000
3500 3250 3000
Turn-on energy loss EON - (mJ)
3000 Conditions: IT = 3000A Tj = 125C Cs = 6F 2500 Rs = 4.4 Ohms IFGM = 40A
Turn-on energy loss EON - (mJ)
VD = 2250V
2750 2500 2250 2000 1750 1500 1250 VD = 1500V VD = 2250V
2000
VD = 1500V
1500
VD = 750V
1000
VD = 750V
500
1000 Conditions: IT = 3000A, Tj = 125C Cs = 6F, Rs = 4.4, 750 dIT/dt = 300A/s, dIFG/dt = 40A/s 500 0 10 20 30 40 50 60 70 Peak forward gate current IFGM- (A)
Fig.11 Turn-on energy vs peak forward gate current
0
80
0 50 100 150 200 250 300 Rate of rise of on-state current dIT/dt - (A/s)
Fig.12 Turn-on energy vs rate of rise of on-state current
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DG758BX45
Turn-on delay time and rise time - (s)
3.0 2.5 2.0 1.5 1.0 0.5 0 0 500 Conditions: Tj = 125C, IFGM = 40A Cs = 6F, Rs = 4.4, dIT/dt = 300A/s, VD = 2250V, dIFG/dt = 40A/s 1000 1500 2000 On-state current - (A) 2500
tr
td
3000
Fig.13 Delay time & rise time vs turn-on current
5.0
Turn-on delay time and rise time - (s)
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
Conditions: IT = 3000A Tj = 125C Cs = 6F Rs = 4.4 dIT/dt = 300A/s VD = 2250V dIFG/dt = 40A/s
tr
td
10 20 30 40 50 60 70 Peak forward gate current IFGM - (A)
80
Fig.14 Delay time & rise time vs peak forward gate current
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DG758BX45
Turn-off energy loss EOFF - (J)
Conditions: Tj = 25C 3.5 Cs = 6F dIGQ/dt = 40A/s 3.0 2.5 2.0 1.5 1.0 0.5 0 0 500 1000 1500 2000 On-state current - (A)
Fig.15 Turn-off energy vs on-state current
4.0
VDM = 3000V VDM = 2000V
VDM = 1000V
2500
3000
Conditions: IT = 3000A 3.8 Tj = 25C Cs = 6F 3.6
Turn-off energy per pulse EOFF - (J)
4.0
VDM = 3000V
3.4 3.2 3.0 2.8 2.6 2.4 2.2
VDM = 2000V
VDM = 1000V
2.0 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
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DG758BX45
7.0
Turn-off energy loss EOFF - (J)
Conditions: Tj = 125C 6.0 Cs = 6F dIGQ/dt = 40A/s 5.0 4.0 3.0 2.0 1.0 0 0 500 1000 1500 2000 On-state current - (A)
Fig.17 Turn-off energy vs on-state current
VDM = 3000V VDM = 2000V
VDM = 1000V
2500
3000
7.0
Turn-off energy per pulse EOFF - (J)
Conditions: IT = 3000A Tj = 125C Cs = 6F
VDM = 3000V
6.0 VDM = 2000V
5.0
4.0
VDM = 1000V
3.0 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt- (A/s)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
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DG758BX45
6.0
Turn-off energy per pulse EOFF - (J)
Conditions: T = 125C 5.0 Vj = 2000V DM dIGQ/dt = 40A/s 4.0 3.0 2.0 1.0 0 0 500 Cs = 1.0F
Cs = 4.0F
Cs = 6.0F
Cs = 2.0F
1000 1500 2000 On-state current - (A)
Fig.19 Turn-off energy vs on-state current
2500
3000
25
Conditions: Cs = 6F dIGQ/dt = 40A/s
20
Gate storage time tgs - (s)
Tj = 125C 15 Tj = 25C
10
5
0 0 500 1000 1500 2000 On-state current - (A)
Fig.20 Gate storage time vs on-state current
2500
3000
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DG758BX45
30 Conditions: IT = 3000A Cs = 6F
Tj = 125C 25 Tj = 25C
Gate storage time tgs - (s)
20
15
10
5 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.5 Conditions: Cs = 6F dIGQ/dt = 40A/s 2.0
Gate fall time tgf - (s)
Tj = 125C
Tj = 25C 1.5
1.0
0.5 0 500 1000 1500 2000 On-state current - (A)
Fig.22 Gate fall time vs on-state current
2500
3000
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DG758BX45
2.5 Tj = 125C Tj = 25C
2.0
Gate fall time tgf - (s)
900
1.5
1.00 Conditions: IT = 3000A Cs = 6F 0.5 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.23 Gate fall time vs rate of rise of reverse gate current
Peak reverse gate current IGQM - (A)
Conditions: Cs = 6F 800 dIGQ/dt = 40A/s 700 600 500 400 300 200 100 0 500 1000 1500 2000 On-state current - (A)
Tj = 125C
Tj = 25C
2500
3000
Fig.24 Peak reverse gate current vs turn-off current
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DG758BX45
1000 Conditions: IT = 3000A Cs = 6F
Peak reverse gate current IGQM - (A)
900
800
Tj = 125C
700
Tj = 25C
600
500 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
10.0 Conditions: Cs = 6F dIGQ/dt = 40A/s 7.5 Tj = 125C
Total turn-off charge QGQ - (mC)
Tj = 25C 5.0
2.5
0 0 500 1000 1500 2000 On-state current - (A) 2500 3000
Fig.26 Turn-off gate charge vs on-state current
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DG758BX45
15.0 Conditions: IT = 3000A Cs = 6F 12.5 Tj = 125C
Turn-off gate charge QGQ - (mC)
10.0 Tj = 25C
7.5
5.0 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
Rate of rise of off-state voltage dV/dt - (V/s)
1000 Tj = 125C
500
VD = 2250V
0 0.1
VD = 3000V 1.0 10 100 Gate cathode resistance RGK - (Ohms) 1000
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
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DG758BX45
Anode voltage and current
0.9VD
0.9IT
dVD/dt VD IT VD VDM
0.1VD td tgt tr
VDP tgs tgf
ITAIL
dIFG/dt
Gate voltage and current
tgq IFG VFG IG(ON)
0.1IFG
0.1IGQ tw1 QGQ 0.5IGQM IGQM Recommended gate condition: ITCM = 3000A IFG = 40A IG(ON) = 8A d.c. tw1(min) = 10s IGQM = 830A diGQ/dt = 40A/s QGQ = 10000C VRG(min) = 2V VRG(max) = 16V V(RG)BR
VRG
These are recommended Mitel Semiconductor conditions. Other conditions are permitted according to users gate drive specifications.
Fig.29 General switching waveforms
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DG758BX45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.60 0.05 x 2.0 0.1 deep (one in each electrode).
15
63 max O112 max O66
Anode
9.6 O70 63 max
Cathode
Nominal weight: 1200g Clamping force: 35kN 10% Lead length: 505mm Package outine type code: X
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of VTO, rT on-state characteristic Impoved gate drive for GTO series connections Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177
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26.0 0.5
DG758BX45
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4095-6 Issue No. 6.0 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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